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| ET383 TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING FUJI POWER TRANSISTOR Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency invertors General purpose power amplifiers JEDEC EIAJ SC-65 Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless otherwise specified) Item Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Base current Collector power disspation Operating junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 1000 1000 10 5 3 80 +150 -55 to +150 Unit V V V A A W C C Electrical characteristics (Tc =25C unless otherwise specified) Item Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Base leakage current Emitter-Base leakage current D.C. current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage *1 Switching time Symbol VCBO VCER VEBO ICBO IEBO hFE VCE(Sat) VBE(Sat) ton tstg tf Test Conditions ICBO = 1mA IC = 1A, RBE = 15 ohm IEBO = 1mA VCBO = 1000V VEBO = 10V IC = 2A, VCE = 5V IC = 2A, IB = 400mA IC = 3A, IB1 = 600mA IB2 = -1200mA, RL = 20 ohm Pw = 20s Duty=<2% Min. 1000 1000 10 Typ. Max. Units V V V mA mA V V s s s 1.0 1.0 10 1.0 1.5 1.0 4.0 0.8 Thermal characteristics Item Thermal resistance Symbol Rth(j-c) Test Conditions Junction to case Min. Typ. Max. 1.5 Units C/W 1 ET383 Characteristics FUJI POWER TRANSISTOR Collector-Emitter voltage VCE[V] Base current IB[A] D.C. current gain hFE Collector current IC[A] Collector Output Characteristics DC Current Gain Collector current IC[A] Saturation voltage VCE(sat), VBE(sat)[V] D.C. current gain hFE Collector current IC[A] DC Current Gain Base and Collector Saturation Voltage *1 Switching Time Test Circuit 2 |
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